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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2682 DESCRIPTION With TO-126 package Complement to type 2SA1142 APPLICATIONS Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Ta=25ae Open emitter OND IC CONDITIONS TOR UC VALUE 180 180 5 0.1 1.2 UNIT V V V A Open base Open collector Emitter-base voltage PC Collector power dissipation TC=25ae 10 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC2682 SYMBOL TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA 0.12 0.5 V VBEsat ICBO Base-emitter saturation voltage IC=50mA; IB=5mA VCB=180V; IE=0 0.8 1.5 V Collector cut-off current 1 |I A IEBO Emitter cut-off current VEB=3V; IC=0 1 |I A hFE-1 DC current gain IC=1mA ; VCE=5V 90 190 hFE-2 DC current gain IC=10mA ; VCE=5V 100 200 320 fT Transition frequency IC=20mA ; VCE=10V Cob Output capacitance hFE-2 Classifications Q 100-200 P IE=0 ; VCB=10V;f=1MHz CHA IN 160-320 E SEM NG OND IC TOR UC 3.2 200 MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2682 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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